Low Capacitance E-Beam Fabricated Beam Lead Schottky Barrier Diodes.

Abstract

This is the final report in the series describing the work performed under contract No. DAJA37-81-C-0261, the object of which is to develop a process capable of fabricating low-parasitic high performance beam diodes. The diode chips use a unique physical structure which maximises overall strength and minimises the structural capacitance. In this report we present the full process which has been developed and we describe the evaluation devices which have been produced. Keywords include: Beam Lead Diodes, Schottky Barrier Diodes, Millimeter Circuits, and Low Noise Receivers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1985
Accession Number
ADA159494

Entities

People

  • G. T. Wrixon

Organizations

  • University College Cork

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Beam Leads
  • Capacitance
  • Contracts
  • Diodes
  • Etching
  • Evaporation
  • Fabrication
  • Low Noise
  • Materials
  • Metal-Semiconductor Junctions
  • Schottky Diodes
  • Substrates
  • Thickness
  • Universities

Readers

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