Surface and Interfacial Properties of InP
Abstract
Calculations of the effect of bulk traps on the time dependence of the channel current in InP accumulation-type MISFET's are reported. It is shown that a uniform density of deep acceptors in the bulk material given rise to a decay in the channel current which decays approximately linearly as a function of the logarithm of time. If capture of the electrons is assumed to occur by a nonradiative multiphonon emission procession, then the temperature dependence that is obtained agrees with experimental results. The energy level and the density of the deep acceptor Fe (1+) trap involved in space-charge-limited current (SCLC) flowing in semi-insulating (SI) InP was deduced from I-V measurements and a model employing either the low-field Hall mobility or the high-field saturated electron velocity v subscipt s. The modified model based on v subscript s, yields the Fe3(+) energy level, D sub 1 = 0.6eV, and the trap density N sub t = 3 X 10 to the 15th power/cc, consistent with data obtained by other means.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1985
- Accession Number
- ADA159912
Entities
People
- H. H. Wieder
- L. G. Meiners
Organizations
- University of California, San Diego