The Effect of Bulk Traps on the InP (Indium Phosphide) Accumulation Type MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor),

Abstract

The enclosed reports represent work performed at USCD on Contract N00014-82-K-2032 entitled 'Surface and Interfacial Properties of InP' and provides a full account of the results obtained during the contract period: May 1, 1984 through April 31, 1985. The paper 'Space charge-limited currents and trapping in semi-insulating InP ' has now been published in Electron. Device Letters, volume EDL-6, page 356 (1985). The manuscript 'Effect of bulk traps on the InP accumulation type MISFET' will be presented as an invited talk at the fall meeting in the Journal of the Electrochemical Society. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA160536

Entities

People

  • L. G. Meiners

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Density
  • Conduction Bands
  • Crystal Lattices
  • Dielectric Permittivity
  • Dielectrics
  • Electric Fields
  • Electrical Engineering
  • Electron Capture
  • Electron Density
  • Electron Emission
  • Electrons
  • Emission
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Low Temperature
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Space