'Metallic Regime of Silicon Inversion Layers, Energy Levels, and Transport Properties.'

Abstract

In n-channel silicon inversion layer the small resistance changes with temperature below 4K have been observed and the physical mechanisms quantified. These mechanisms are a temperature dependent elastic scattering which is mostly mitigated by impurities, and the many body effect upon the elastic scattering. In high quality silicon MOSFETs, inelastic diffusion lengths of about 2 micrometers have been observed, which demonstrated quasione dimensional transport processes in submicron devices. Keywords: silicon inversion layers; elastic scattering; inelastic scattering; submicron devices; Metal oxide semiconductors; Field effect transistors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 13, 1984
Accession Number
ADA160782

Entities

People

  • R. G. Wheeler

Organizations

  • Yale University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Elastic Scattering
  • Electromagnetic Scattering
  • Electron Density
  • Electron Scattering
  • Electrons
  • Energy Levels
  • Field Effect Transistors
  • Inelastic Scattering
  • Lasers
  • Low Temperature
  • Metal Oxide Semiconductors
  • Picosecond Time
  • Plastic Explosives
  • Scattering
  • Semiconductors
  • Spectra
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics