Interface Chemistry of Ternary Semiconductors: Local Morphology of the Hg(1-x)CdxTe-Cr Interface.
Abstract
Synchrotron Radiation Photoemission studies of interfaces prepared in situ on cleaved substrates show atomic interdiffusion with Cr/Hg and Cr/Cd exchange reactions taking place at room temperature for Cr coverages less than 2A. Correspondingly, dissociated Te is released at the surface. A subsurface region 10-13 A thick is formed in which Cr atoms replace all of the Hg atoms and at least 20% of the Cd atoms. Below this subsurface the semiconductor maintains the bulk stoichiometry and the initial surface band bending. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1985
- Accession Number
- ADA161034
Entities
People
- A. Franciosi
- D. J. Peterman
- P. Philip
Organizations
- University of Minnesota