Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide.

Abstract

The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1985
Accession Number
ADA161147

Entities

People

  • Helmut Kanter

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Artificial Intelligence
  • Chemistry
  • Crystal Growth
  • Diffraction
  • Electronics
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Gallium Arsenides
  • Materials
  • Materials Science
  • Millimeter Waves
  • Molecular Beams
  • Physics Laboratories
  • Radiation
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics