The Structure of Defects in GaAs and Related Materials.

Abstract

A new approach for characterizing super-lattice structures has been developed which uses REM to examine the layer quality rather then conventional TEM. The technique developed by Alexander to deform Si at low temperatures has been applied for the first time to GaAs. The results are complimentary to those of Maeda and Takeuchi, but are much higher spatial resolution. This technique has been extended to the technologically important case of the superlattice by actually deforming a series of superlattice structures at these same low (150 C) temperatures. Finally a new approach has been developed for growing bicrystals of GaAs using a Ge bicrystal as a substrate. Keywords include: Semiconductors, Gallium Arsenide, Grain Boundaries, Dislocations, Compound Semiconductors, Superlattice Structures, and Gallium Arsenide Bicrystals.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 24, 1985
Accession Number
ADA161272

Entities

People

  • C. B. Carter

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Classification
  • Compound Semiconductors
  • Crystal Lattices
  • Electrical Engineering
  • Electron Microscopy
  • Gallium
  • Gallium Arsenides
  • Grain Boundaries
  • Heterojunctions
  • Low Temperature
  • Materials
  • Microscopy
  • Military Research
  • Quantum Wells
  • Security
  • Semiconductors
  • Universities

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics