Plasma Deposition of Silicon Carbide Thin Films.
Abstract
During this reporting period we completed the adaptation of experimental equipment required for three related areas of the research program: understanding plasma deposition chemistry and physics, characterization of plasma deposited thin films, and surface chemistry of elemental deposition processes. In the plasma studies area, extensive experiments were conducted on methane plasmas, and experiments were begun on methane-silane plasmas. We achieved significant anisotropy in the deposition chemistry by controlling electrode bias and the data are being compared to a theoretical model produced in a collaborative effort by L.E. Kline at Westinghouse R&D Center. We have selected characterization techniques for the thin films produced with these plasmas, and measurements have begun. The UHV apparatus for surface chemistry was acquired, assembled, and tested, and initial measurements of the desorption of organic gases were completed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 30, 1985
- Accession Number
- ADA161275
Entities
People
- John Yates
- L. E. Kline
- Michael J. Bozack
- W. D. Partlow
- W. J. Choyke