Switch-Level Timing Simulation of MOS VLSI (Metal-Oxide-Semiconductor Very Large-Scale Integrated) Circuits.
Abstract
This report deals with the development of a fast and accurate simulation tool for very-large-scale integrated (VLSI) circuits consisting of metal-oxide-semiconductor (MOS) transistors. Such tools are called switch-level timing simulators and they provide adequate information on the performance of the circuits with a reasonable expenditure of computation time even for very large circuits. The algorithms presented in this thesis can handle only n-channel MOS(NMOS) circuits, but are easily extendible to handle complementary MOS(CMOS) circuits as well. The algorithms presented in this report have been implemented in a computer program called MOSTIM. In all the circuits simulated thus far, MOSTIM provides timing information with an accuracy of within 10% of that provided by SPICE2, at approximately two orders of magnitude faster in simulation speed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1985
- Accession Number
- ADA161371
Entities
People
- Vasant B. Rao
Organizations
- University of Illinois Urbana–Champaign