A Measurement of Intrinsic SiO2 Film Stress Resulting from Low Temperature Thermal Oxidation of Si.
Abstract
Over the past several years there have been a number of studies that have reported an intrinsic SiO2 film stress resulting from the thermal oxidation of Si at low oxidation temperatures. The intrinsic stress has been considered to be influential in Si oxidation kinetics both at the Si-SiO2 interface and by altering the diffusion of oxidant. Various stress measurements have been reported using light in single beam and double beam reflection experiments, and using the automatic Bragg angle camera (ABAC) technique. Laser techniques are not well described in the literature, often without calibration standards, diagrams and detailed procedures. We report, in the present study, a double beam technique, with calibration standards and the experimental results of one study using the technique to measure SiO2 stress on Si at room temperature. This parallel beam reflection technique has been developed in our laboratory for measuring intrinsic residual stress for Si wafers thermally oxidized at temperatures of 600-1150 C. A detailed description of this technique is provided, and calculation of stress values are consistent with those reported in the literature. Low temperature thermal oxidations resulted in compressive intrinsic SiO2 stresses greater than 4,000,000,000 dyn/sq cm. Originator supplied keywords include: Thin film growth models.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1985
- Accession Number
- ADA161620
Entities
People
- E. Kobeda
- Eugene A. Irene
Organizations
- University of North Carolina at Chapel Hill