A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon.
Abstract
Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1985
- Accession Number
- ADA161634
Entities
People
- Eugene A. Irene
- J. K. Srivastava
Organizations
- University of North Carolina at Chapel Hill