A Study of Gauss-Seidel-Type Methods for Simulating Large-Scale Circuits.

Abstract

The Gauss-Seidel relaxation method is becoming widely used in the time-domain analysis of large-scale integrated circuits. This research is concerned with the study of the stability properties of point Gauss-Seidel methods when applied to the simulation of MOS circuits. The stability properties of standard Gauss-Seidel and of a modified Gauss-Seidel method with prediction are compared; and a new modified Gauss-Seidel method is proposed which incorporates the desirable properties of both the standard Gauss-Seidel and the one with prediction. The method has been tested in a computer program for the timing analysis of MOS circuits. Keywords include: Integrated Circuits; Time-domain simulation of MOS LSI circuits; and Gauss-Seidel Method.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA161711

Entities

People

  • Keith C. Anderson

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Circuit Analysis
  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Computer Programs
  • Computer-Aided Design
  • Computers
  • Differential Equations
  • Eigenvalues
  • Electronic Circuits
  • Equations
  • Integrated Circuits
  • Large Scale Integrated Circuits
  • Operating Systems
  • Semiconductors
  • Simulations
  • Simulators
  • Time Domain

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Parallel and Distributed Computing.