Models for the Oxidation of Silicon.

Abstract

Many adaptations to the linear parabollic model for silicon oxidation have been proposed. For the purpose of process engineering, curve fitting procedures which are sometimes devoid of physical content but numerically precise are employed. However, a truely unified physical model which is in quantitative accord with all known facts is still lacking. In this review, we will discuss the 'facts' and newer models.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1985
Accession Number
ADA161751

Entities

People

  • E. A. Lewis
  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reactions
  • Chemistry
  • Curve Fitting
  • Electric Fields
  • Equations
  • Films
  • Integrated Circuits
  • Low Temperature
  • Materials
  • Materials Science
  • Military Research
  • Oxidation
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Structural Properties

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.