Microwave Semiconductor Research Materials, Devices and Circuits.

Abstract

This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE) are used for growth.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1985
Accession Number
ADA162021

Entities

People

  • D. W. Woodard
  • G. W. Wicks
  • J. M. Ballantyne
  • L. F. Eastman
  • S. D. Mukherjee

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplitude Modulation
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Field Effect Transistors
  • Gallium Arsenides
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics