X-Ray Absorption Fine Structure Studies of Semiconductor Superlattices.

Abstract

First application of extended x-ray absorption fine structure (EXAFS) technique to measurements of interatomic distance, local order, and strain in semiconductor superlattices and heterostructures has been successfully demonstrated. This result opens many possibilities for obtaining unique structural information in various semiconductors. Keywords: X-ray absorption; Semiconductor superlattices; Semiconducter heterostructures; Gallium arsenides; Indium arsenides; Aluminum antimonides; Indium gallium arsenide; and Indium phosphides.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 30, 1985
Accession Number
ADA162031

Entities

People

  • Yi-han Kao

Organizations

  • Stony Brook University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Abstracts
  • Band Structures
  • Compound Semiconductors
  • Elements
  • Films
  • Heterojunctions
  • Materials
  • Measurement
  • New York
  • Radiation
  • Semiconductors
  • Soft X Rays
  • Students
  • Synchrotron Radiation
  • Universities
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene