Experimental and Theoretical Studies of Radiative and Nonradiative Processes in Semiconductors.

Abstract

The study of impurities and defect levels in semiconductors is of major scientific and technological interest. In many cases, the phenomena associated, particularly with deep levels, are not well understood even in this day. In the programs supported under this contract, a number of major contributions were made in this broad area of research. We developed a new form of spectroscopy which allows one to explore some of the excited states of various centers. We were the first to identify and study in detail a change in the structure of a defect due to a radiation with a laser, the so-called non-radiative induced defect reaction process. We studied the properties of some interesting deep levels in silicon and, in particular, attempted to develop an understanding of the origin of these deep levels which are thought to be associated with clusters of one of the classic shallow acceptors and iron.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA162032

Entities

People

  • T. C. Mcgill

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Computational Science
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Dye Lasers
  • Energy Bands
  • Laser Beams
  • Liquid Dye Lasers
  • Luminescence
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy

Readers

  • Military History of the United States in the 20th Century.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics