The Relationship between the Auger Lineshape and the Electronic Properties of Graphite.

Abstract

The experimental carbon Auger lineshape corrected for the effects of the secondary-electron background and extrinsic losses and placed on an absolute energy scale through the use of photoelectron measurements. The resulting lineshape is compared to a model which consists of the self-convolution of the graphite one-electron density of states, including atomic values for the symmetry determined Auger matrix elements. A poor comparison results from this simple model which is considerably improved by the inclusion of dynamic initial-state screening effects. Further improvements results from accounting for final-state hole-hole interactions. The final state is characterized by effective hole-hole interaction energies of 2.2 eV, corresponding to two holes in the sigma band, 1.5 eV for one hole in the sigma and one in the pi band, and 0.6 eV for both holes in the pi band. The remaining discrepancies in our model comparison are suggested to be due to a plasmon emission intrinsically coupled to the Auger final state. Keywords: Auger spectroscopy, Graphite, Localization, and Screening.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1985
Accession Number
ADA162042

Entities

People

  • David E. Ramaker
  • F. L. Hutson
  • J. E. Houston
  • J. W. Rogers
  • R. R. Rye

Organizations

  • George Washington University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Auger Electrons
  • Chemistry
  • Distortion
  • Electron Density
  • Electron Energy
  • Electron Spectroscopy
  • Energy Bands
  • Fermi Levels
  • Kinetic Energy
  • Materials
  • Materials Science
  • Military Research
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Valence Bands
  • X Rays

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics