Infrared Nonlinear Processes in Semiconductors.

Abstract

Observation of exceedingly narrow spin flip lines in n-InSb suggests the existence of spin waves in this crystal. Si:P has been shown to have a large nonlinear optic coefficient at the metal-insulator transition; the effect is believed to be due to electron promotion from localized to delocalized states. Preliminary nonlinear optic experiments imply that hole kinetics in p-type InGaAs/GaAs strained layer superlattices are different from those of bulk p-GaAs. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 24, 1985
Accession Number
ADA162096

Entities

People

  • D. M. Larsen
  • E. Isaacs
  • P. A. Wolff
  • R. L. Aggarwal
  • S. Y. Yuen

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Crystals
  • Electrons
  • Energy Bands
  • Frequency
  • Kinetics
  • Lasers
  • Metal-Insulator Transitions
  • Physics
  • Plasma Waves
  • Relaxation Time
  • Resonance
  • Semiconductors
  • Spin Resonance
  • Spin Waves
  • Superlattices
  • Transitions
  • Wave Mixing

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Wave Propagation and Nonlinear Chaotic Dynamics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene