Theoretical Investigations of the CVD (Chemical Vapor Deposition) of Silicon from Silane.

Abstract

The results of a program of theoretical research to determine the relative importance and dynamics of various elementary processes occurring in the chemical vapor deposition (CVD) of silicon from silane are reported. The processes studied include the gas-phase unimolecular dissociation of SiH4, Ch4, and SiH2, the homogeneous three-body recombination of Si atoms, surface adsorption and diffusion of Si atoms on Si(100) and Si(111) surfaces, and the recombination and desorption of H2 on silicon surfaces. In addition, several studies involving the reaction dynamics of van der Waals molecules are described. We also report the development of a quantum mechanical method for computing the results of elastic and inelastic atomic scattering from surfaces. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1985
Accession Number
ADA162548

Entities

People

  • Donald L. Thompson
  • Lionel M. Raff

Organizations

  • Oklahoma State University–Stillwater

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Chemical Vapor Deposition
  • Deposition (Materials Processing)
  • Desorption
  • Diffusion
  • Dissociation
  • Dynamics
  • Material Coating Processes
  • Molecules
  • Scattering
  • Vapor Deposition

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing