Diffusion and Defect Characterization Studies of Mercury Cadmium Telluride

Abstract

Two major areas are under study: epitaxial film growth p of Hg1- XCdxTe(MCT); and diffusion in MCT. The objective of the film growth study is to evaluate mechanisms of the film growth process and to provide samples for property and device study in MCT. The objectives of the diffusion studies are to resolve inconsistencies in the literature regarding this important practical phenomenonl and to elucidate the dominant defects present in this ternary compound. A brief description of current activity and progress is given.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA162586

Entities

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Chemical Etching
  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Electronic Materials
  • Epitaxial Growth
  • Isotope Exchange
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Materials
  • Phase
  • Ternary Compounds
  • Transition Temperature
  • Vapor Phases
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design