Examination of Millimeter-Wave Performance Potential of Modulation Doped AlGaAs/GaAs FET Structures.

Abstract

This investigation involved a critical examination of the millimeter-wave performance requirements of the modulation-doped n-AlGaAs/GaAs FET structures. The results of this study revealed the need for a high aspect ration design for the gate structure of MODFET's for millimeter-wave performance. A detailed design procedure has also been developed for submicron gate-length MODFET's, determination of carrier saturation velocity, and power gain and noise figure performance of MODFET's. Keywords include: Field effect transistors; FETS; Modulation Doped FETS; MODFETS; Metal Semiconductor FETS; and MESFETS.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1985
Accession Number
ADA163152

Entities

People

  • Mukunda B. Das

Organizations

  • Wright Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aeronautical Laboratories
  • Air Force
  • Air Force Facilities
  • Aspect Ratio
  • Capacitance
  • Carrier Mobility
  • Electron Mobility
  • Electronics Laboratories
  • Equations
  • Fabrication
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Materials
  • Millimeter Waves
  • Power Electronics
  • Semiconductors
  • Transport Properties

Fields of Study

  • Engineering
  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics