Hillock Formation on (100) GaAs.

Abstract

For application to the growth of gallium arsenide (GaAs) by metal-organic chemical vapor deposition, the dependence of surface morphology and hillock formation on crystal orientation, AsH3/TMG ratio, and oxide contamination was investigated. Layers of GaAs were deposited on undoped liquid-encapsulated Czochralski (LEC) GaAs substrates oriented either (100) or (100)+ 2 deg yields <110>. Substrate orientation was checked by Laue X-ray diffraction. Surface features were observed by phjase contrast optical microscopy and surface profilometry. To examine the relationship of hillock formation to oxide contamination, GaAs substrate surfaces were exposed to water vapor prior to epitaxial growth. Keywords: Gallium arsenide; Arsine; and Surface defects.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 27, 1985
Accession Number
ADA163308

Entities

People

  • P. M. Adams
  • S. I. Boldish

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Diffraction
  • Electric Vehicles
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Orientation (Direction)
  • Physics Laboratories
  • Radiation
  • Spectra
  • Vapor Deposition
  • Water Vapor
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene