Focused Ion Beam Fabrication of Graded Channel FET's in GaAs and Si.

Abstract

The aim of this program is to fabricate field effect transistors in Si and GaAs in which the doping in the channel is varied as a function of distance from source to drain. The focused ion beam machine is a unique tool which is capable of producing such graded implants. In achieving this goal alignment procedures of the focused ion beam to existing features on the wafer have to developed, and the focused ion beam implants must be characterized and compared to conventional implants. In addition, models of the behavior of the graded channel devices must be developed.

Document Details

Document Type
Technical Report
Publication Date
Jan 27, 1986
Accession Number
ADA163475

Entities

People

  • John Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Active Electronic Components
  • Charged Particles
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Ion Beams
  • Ions
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.