Schottky Barrier Surface Science.

Abstract

Thermal desorption mass spectrometry (TDMS) and X-ray photoelectron spectroscopy (XPS) are utilized to study GaAs(100) surfaces prepared by MBE and chemical etching. XPS results on the chemically etched GaAs samples revealed As present in GaAs and As(+3) in the form of As2O3. TDMS of both the chemically etched and MBE prepared GaAs showed several impurities such as H2, H2O, CO2 and CO. Also, the surface reactions of water and ammonia with atomically clean GaAs survaces are studied with XPS and TDMS. These results help identify possible contaminants that may interfere with GaAs device performance. Keywords: Thermal desorption mass spectrometry; X-ray photoelectron spectroscopy; Surface science; GaAS processing Surface reactions; Gallium arsenide (100); Hydrogen; Water; Carbon dioxide; Carbon monoxide; Arsenic oxides.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1985
Accession Number
ADA163574

Entities

People

  • Patricia M. George

Organizations

  • Aerojet Rocketdyne Holdings

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Arsenic
  • Chemical Synthesis
  • Chemistry
  • Desorption
  • Dielectric Gases
  • Diffraction
  • Hydroxides
  • Low Temperature
  • Mass Spectra
  • Mass Spectrometry
  • Materials
  • Spectra
  • Spectrometry
  • Spectroscopy
  • Water
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene