Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers.

Abstract

The design and dc performance of enhanced Schottky barrier modulation doped transistors (ESMODFETs) is presented. The theory required to estimate the layer thicknesses and dopings required for a desired barrier height is developed. The experimental results show and increase from 0.8eV to 1.6eV for the ESMODFET versus the standard MODFET, with good correlation between theory and experiment. The ohmic contact resistance of the ESMODFET is comparable to that of the MODFET. The process used to fabricate the ESMODFET is similar to that used for the MODFET. (Theses)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA164103

Entities

People

  • Kevin L. Priddy

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electron Mobility
  • Energy Bands
  • Engineering
  • Fermi Levels
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology