The Radiation Effects of High Energy Electrons upon Thermionic Integrated Circuits.

Abstract

Thermionic Integrated Circuit (TIC) devices use a hybrid of vacuum tube and integrated circuit technology. The integrated circuitry is fabricated on a sapphire (Al2O3) substrate. A device was irradiated to attempt to establish a total dose (measured in rad Si) of radiation to cause the TIC device to malfunction. The TIC device was irradiated using 30 and 100 Mev electrons provided by the Naval Postgraduate School Linear Accelerator (LINAC). The device received a total dose of 1.8155 x 10 to the ninth power rad Si during the course of the experiments. It continued to function normally through the irradiation study, so it is concluded that the device is not sensitive to radiation, at least at the levels used.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA164124

Entities

People

  • William R. Arguello

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charged Particles
  • Circuits
  • Crystal Lattices
  • Electron Tubes
  • Electrons
  • Energy
  • Fabrication
  • High Energy
  • Integrated Circuits
  • Linear Accelerators
  • Materials
  • Point Defects
  • Production
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • United States

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Software Engineering
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics