Epitaxial (100) GaAs Thin Films on Sapphire for Surface Acoustic Wave/Electronic Devices.

Abstract

In the past year it has been demonstrated that undoped <111> single crystal gallium arsenide could be grown on <0112> sapphire using the metalorganic chemical vapor deposition (MO-CVD) growth technique. An interesting and unexpected result from this work was that the GaAs films grown had a <111> orientation instead of the proposed <100> orientation. Keywords include: Metalorganic chemical vapor deposition, gallium arsenide, surface acoustic wave devices, and R-plane sapphire.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA164252

Entities

People

  • Victor E. Haven Jr

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acoustic Waves
  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Materials
  • Materials Processing
  • Materials Science
  • Solar Cells
  • Solar Energy
  • Surface Acoustic Wave Devices
  • Surface Acoustic Waves
  • Surface Roughness
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene