Semiconducting Transition Metal Silicides for Electro-Optic VSLI Interconnects.

Abstract

Since the start of the project on September 15, 1985, we have fabricated and partially characterized the CrSi2 thin films, and made preparations for improved optical measurement and for investigating the two other proposed materials, MnSi(1.7) and IrSi(1.75). These are detailed: Chromium Silicide Formation, X-ray Diffraction Analysis of the Films, Resistivity Measurements, Optical Measurements; and Preparations for MnSi(1.7) and IrSi(1.7r).

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Document Details

Document Type
Technical Report
Publication Date
Oct 15, 1985
Accession Number
ADA164303

Entities

People

  • John E. Mahan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chromium
  • Crystallography
  • Diffraction
  • Diffraction Analysis
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • Materials
  • Measurement
  • Metals
  • Microscopes
  • Optical Analysis
  • Sputtering
  • Substrates
  • Thin Films
  • Transition Metals

Fields of Study

  • Materials science
  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Optical Physics and Photonics.