X-Band GaAs ISIS (Integrated Series IMPATT Structures) IMPATTS.

Abstract

The underlying purpose of this nine month program was to demonstrate the feasibility of synergistic power in Gallium Arsenide Integrated Series IMPATT Structures (ISIS). In order to demonstrate such a feasibility, the program entailed the following: Task 1: (a) Designing of appropriate doping profiles for GaAs X-band ISIS diodes; (b) Growing Integrated Series IMPATT Structures using Vapor Phase Epitaxy (VPE); and (c) Characterizing the doping profiles of the ISIS wafers. Task 2: (a) Processing ISIS wafers grown by VPE into single mesa diodes with integral heat sinks; (b) Processing ISIS wafers grown by Molecular Beam Epitaxy (to be provided by NRL) into single mesa diodes with integral heat sinks; and (c) Assembling diodes of (a) and (b) into standard packages compatible with coaxial mounts.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1985
Accession Number
ADA164380

Entities

People

  • Murthy Ayyagari
  • Rovindra Dat

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Programs
  • Epitaxial Growth
  • Fabrication
  • Frequency
  • Heat Energy
  • Heat Sinks
  • Impatt Diodes
  • Materials
  • Measurement
  • Phase Transformations
  • Resistance
  • Semiconductors
  • Standards
  • Test And Evaluation
  • Test Fixtures
  • Thermal Resistance
  • Transitions

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics