Observation of Mechanism for Higher Operating Temperature Extrinsic Detectors.
Abstract
Spectral photoconductivity, detectivity, infrared absorption and Hall effect transport measurements were used to study the electrical and optical properties of Si:In that had been irradiated with 1 MeV electrons. The Hall effect and infrared absorption measurements showed no unusual behaviour before or after irradiation. The photoconductivity and detectivity measurements showed a large improvement in the operating temperature range of the Si:In material after electron irradiation. Before irradiation, the detector signal became swamped by noise at 22K. After irradiation, the signal was maintained up to 80K. The magnitude of the photoresponse versus temperature remained constant up to 65K at which temperature detector noise began to set in. A constant D* peak value of 2.2 x 10 to the 10th power (cm-sq rt. Hz/Watt) was measured up to 60K. Keywords include: Silicon, indium, electron irradiation, x-levels, photoconductivity, photothermal ionization, Hall effect, infrared absorption, extrinsic detectors, and counterdoping.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1985
- Accession Number
- ADA165274
Entities
People
- David Fischer
- Frank Szmulowicz
- Gail J. Brown
- Melvin C. Ohmer
- Steve Smith
Organizations
- Wright Laboratory