The Development of Sputtered Neutral Mass Spectrometry for the Quantitative Depth Profiling of Compound Semiconductor Materials
Abstract
This document evaluate the applications potential of sputtered neutral mass spectrometry (SNMS) as implemented in the INA-3 for advanced materials characterization. The report will detail initial hands-on experiences with SNMS via the prototype version of the INA-3. The key functional components and parameters are: 1. The rf plasma uniquely established by pressure, rf power and external DC magnetic field, 2. Ion extraction optics consisting of an extraction electrode, focusing lens, 30 deg electrostatic analyzer (ESA) and transfer elements required to transport the energy filtered ion beam into a quadrupole mass spectrometer. 3. A conventional quadrupole mass filter with electron multiplier detector, and 4. The target bias supply. In the latter case, the Kaiserslautern instrument references the target potential to the plasma potential via a Langmuir probe, whereas the INA-3 presently references the target power supply to ground potential (i.e., no Langmuir probe). Our studies to date have indicated that a Langmuir reference might make a significant improvement.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 15, 1985
- Accession Number
- ADA165516
Entities
People
- David A. Reed