Electron Induced Conductivity of Al2O3 as Pertaining to Thermionic Integrated Circuits.

Abstract

Experiments were conducted to measure the electron induced conductivity (EIC) of single crystal sapphire (Al2O3) and poly-crystalline alumina (Al2O3). The EIC is generated when the samples are bombarded with high energy electrons, utilizing the Naval Postgraduate School's S-band linear accelerator (LINAC). The EIC was measured at dose rate up to 6 x 10 to the 7th power rad (Si)/sec. The EIC for alumina was an order of magnitude smaller than the value for sapphire. The value calculated for alumina was 10,000 per ohm cm and 1,000 per ohm cm for sapphire. The response of EIC to a given dose rate did not change as the dose accumulated. Surface flashover problems during electron irradiation were observed and are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA165589

Entities

People

  • Peter J. Peterson

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Charge Carriers
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dielectrics
  • Electron Irradiation
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Integrated Circuits
  • Ionizing Radiation
  • Linear Accelerators
  • Point Defects
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics