InP Materials.

Abstract

This report covers the work on InP materials carried out with the support of the Department of the Air Force during the period 1 October 1984 through 30 September 1985. A part of this support was provided by the Rome Air Development Center. The probability of twinning in LEC growth of InP was found to be much higher for the <100> orientation that for the <111>. An optical absorption technique is being developed for estimating the residual impurity concentration in semi-insulating Fedoped InP. It has been shown that V in InP behaves as a deep donor located approx. 0.2 eV above the valence band. Keywords: InP synthesis; InP crystal growth; Crystal growth; Liquid encapsulated Czochralski(LEC); Single crystals; Doping; Thermal stability.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1985
Accession Number
ADA165706

Entities

People

  • Gerald W. Iseler

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Cross Sections
  • Air Force
  • Coefficients
  • Crystal Growth
  • Crystals
  • Electrical Measurement
  • Energy Bands
  • Low Temperature
  • Mass Spectrometry
  • Materials
  • Measurement
  • Optical Absorption
  • Single Crystals
  • Spectra
  • Temperature Gradients
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics