CSFIT: A FORTRAN Program for Charge-Sheet Model Fitting of MOSFET Data,

Abstract

A FORTRAN program, CSFIT, has been developed for fitting an expression for the current-voltage (I-V) characteristics of a long-channel MOSFET to experimental I-V curves. The one-dimensional charge-sheet model developed by Brews provides the basis for the I-V characteristics. The I-V characteristics given by this model are optimized with respect to a set of experimental data using the flatband voltage and the mobility as the only adjustable parameters. The program is written so that multiple sets of I-V data can be fit simultaneously if desired. The user must supply, in specified formats, a current-voltage data file, a device parameter file, and a starting value file. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1985
Accession Number
ADA165708

Entities

People

  • L. C. Witte

Organizations

  • National Institute of Standards and Technology

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  • Advanced Electronics

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  • Algorithms
  • Chemical Compounds
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  • Metal Oxide Semiconductors
  • Mobility
  • Optimization
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  • Semiconductors
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  • Transistors

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