Semiconducting Transition Metal Silicides for Electro-Optic VSLI Interconnects.
Abstract
We have optically characterized the CrSi2 samples, and fabricated thin films of MnSi(1.7) and IrSi(1.75). X-ray analysis of the latter two silicides has also been accomplished. These developments are summarized. A forbidden energy gap of approx. 0.3eV is obtained from the onset of strong absorption at that energy. The interference fringes correspond to a refractive index-film thickness product of approx. 10 microns; the estimated film thickness of 2.4 microns gives a refractive index of approximately 4.2 below the absorption edge. Thin films of this material were formed by ion beam sputtering and furnace reaction techniques as described for CrSi2 in our first progress report. X-ray diffraction analysis of the films confirms the presence of the semiconducting manganese silicide, with no other detectable phase except the silicon substrate. A representative X-ray diffraction pattern for a film formed at 750C is shown. Again, the data indicate the well-crystallized semiconducting silicide phase and no other except for the silicon substrate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1986
- Accession Number
- ADA165895
Entities
People
- John E. Mahan