Semiconducting Transition Metal Silicides for Electro-Optic VSLI Interconnects.
Abstract
Optical and electrical measurements of the chromium disilicide forbidden energy gap have been made. These activities are detailed. The samples used for this experiment were formed by sputtering chromium onto silicon (100) wafers which had been thermally oxidized and then coated with a polysilicon layer. Chromium disilicide layers were formed with annealing temperatures ranging from 500 to 1100C to investigate the effect of this fabrication parameter on the forbidden energy gap of the films. Some initial measurements of the optical transmittance and reflectance of the chromium silicide films are shown using films formed on bare silicon wafers. These data have been analyzed using a computer model of the silicide film-silicon substrate system. The manganese and iridium sputtering targets have not arrived from the vendor. The work on these materials will begin as soon as these targets are received.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 27, 1985
- Accession Number
- ADA165911
Entities
People
- John E. Mahan