Compound Semiconductor Surfaces and Interfaces.
Abstract
All semiconductor devices and integrated circuits require dielectric layers for interconnect isolation, gate oxides, passivation, etc. Thermally grown SiO2 is the primary dielectric film for silicon technology. This ONR contract investigated the chemistry and electrical properties of the interface between III-V compound semiconductors and electrical properties of grown oxides and deposited. When this study began, very little was known about these oxides or their interfaces. The results of the research supported by this contract has added substantially to the fundamental understanding of the oxide growth, properties and electronic structure. Much of the experimental work was obtained with surface analytical techniques and significant contributions were also make in this field. The original ONR contract began in October 1975 and initially concentrated on the grown oxides of InP and GaAs. This work evolved over the years to include the study of deposited insulator/InP interfaces and trapping at the interface. The ONR contract has supported the publication of 31 journal articles and book chapters and numerous conference presentations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1986
- Accession Number
- ADA165947
Entities
People
- C. W. Wilmsen
Organizations
- Colorado State University