Investigation of the Basic Mechanisms of Radiation Effects on Electronic Materials and Devices and Development of Hardening Techniques. Volume 1
Abstract
This report presents results of a study of radiation effects on electronic materials and devices. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with these materials and components with a view toward gaining understanding of benefit to developers of radiation- tolerant devices and circuits. Thermally stimulated current measurements have been performed on irradiated Si02 films in order to obtain basic mechanisms information regarding the nature of hole traps at the Si02-Si interface. The same activation energies approx. 0.85 and approx. 1.3 eV) were observed in both soft and hard oxides. Hard oxides simply have fewer hole traps then their soft counterparts. The effects of sodium contamination were also examined. Time- resolved charge collection measurements have been performed on GaAs devices bombarded with single 5.0-MeV alpha particles. Preliminary data indicate that charge funneling does occur in GaAs. Results of an experimental and analytical study of the effects of 14-MeV neutrons on silicon are presented. Keywords included: Radiation Effects, Radiation Hardening, Hard Errors, Soft Errors, Single Event Phenomena, and Neutron Damage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1983
- Accession Number
- ADA166114
Entities
People
- Joseph. R. Srour
- Mark A. Hopkins
- Robert A. Hartmann
- Siegfreid Othmer
- Zef Shanfield