Reactions of Laser-Generated Free Radicals at Semiconductor Surfaces.

Abstract

Reactions of laser-generated free radicals at semiconductor surfaces have been investigated by photoelectron spectroscopy of adsorbed surface layers and by laser induced fluorescence detection of the gas-phase species. Systems investigated include dissociative chemisorption of XeF2 and CF3 on Si(111), IR multiple photon dissociation of alkylsilanes and characterization of SiH2. Theoretical calculations of spectroscopic, structural, and thermodynamic properties of reactive free radical intermediates have also been undertaken. Keywords: Surface chemistry; Semiconductors; Fluorocarbons; Silicon; Cyclosilane; Laser induced fluorescence; Multiple photon excitation; Chemisorption; Laser photochemistry; and Carbon trifluoride.

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Document Details

Document Type
Technical Report
Publication Date
Nov 25, 1985
Accession Number
ADA166233

Entities

People

  • Jeffrey I. Steinfeld

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Compounds
  • Chemistry
  • Decomposition
  • Detection
  • Dissociation
  • Excitation
  • Fluorescence
  • Free Radicals
  • Infrared Lasers
  • Laser Induced Fluorescence
  • Massachusetts
  • Photochemistry
  • Semiconductors
  • Spectroscopy
  • Surface Chemistry
  • Surface Reactions

Fields of Study

  • Chemistry
  • Physics

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Molecular Photonics/Laser Physics
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics