Experimental Study of Electronic States at Metal-Dielectric Interfaces.
Abstract
By means of new infrared techniques we are exploring both the time and frequency domain spectra of electronic interface states. These data can be used to obtain information specific to interfaces such as mobility and diffusion, lifetimes, energy levels and the density of states. We shall continue the development of new infrared techniques which are ideally matched to the interface problem and then use these techniques to measure and characterize the physical properties of electronic states at metal-dielectric interfaces. Since these techniques rely on evanescent electromagnetic waves a closely related objective is to explore the near field electrodynamics of structures which produce evanescent fields. Metal semiconductor interfaces can be studied with broadband SEW spectroscopy using incoherent thermal radiation for a source and the surface photoconductivity for a detector. With coherent sources power dependent absorption measurements and also light scattering from surface electrokinetic phenomena become feasible. These instrucments will not only be used to probe the excitation spectra of metal-semiconductor interface states but also to explore the magnetic field dependence of the energy levels in n-type InSbNiSb eutectic.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 23, 1985
- Accession Number
- ADA166242
Entities
People
- A. J. Sievers
Organizations
- Cornell University