Spin-Coated Amorphous Chalcogenide Resists Spin-Coated Amorphous Chalcogenide Glasses.
Abstract
Amorphous films of several chalcogenides were spin-cast from solutions prepared by dissolving the starting material in organic solvents. As-deposited materials were identified as amine and amide salts. A mechanism was proposed for the dissolution of arsenic trisulfide in the organic solvent as maromolecular clusters. Thermal annealing to 200 C of arsenic trisulfide solution-cast material showed decomposition of the organic salt about 90 C followed by cross-linking of arsenic sulfide clusters above 130 C. Technologically utile, quality thin films were obtained with spin deposited arsenic trisulfides. Pattern replication using ultra-violet photodoping by silver was demonstrated and a scheme for high resolution lithography was proposed. 0.4 micrometer wide patterns over 1 micrometer topography were replicated without dimensional loss. Multilayer films of up to 4.5 micrometers were obtained for optical measurements by several consecutive spinning-baking sequence, without reduction in flatness. The mean value of the index of refraction and optical band gap were 2.227 + or - 0.055 and 2.273 + or - 0.024 eV respectively. Electronic structure of As4S4 and As4Se4 molecules were calculated and the resulting molecular band gaps were consistent with the measure value for the corresponding glasses. The calculated density-of-valence-states for the molecules were of very good agreement with valence band XPS measurement on the solids.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 24, 1985
- Accession Number
- ADA166270
Entities
People
- I. Lauks
- J. J. Santiago
- J. N. Zemel
- S. Rabii
Organizations
- University of Pennsylvania