Silicon Wafer Cleaning for Integrated Circuit Fabrication,

Abstract

A comparative study has been made of silicon wafers cleaned using different immersion methods in SPEL. The surfaces so produced have been assessed by various methods. The results obtained after using these cleans are reported and shown to be consistent with those described in the literature. The optimum clean has been found to be that described by RCA. This was adopted in SPEL as a standard procedure in August 1984 and results have been encouraging.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA166695

Entities

People

  • A. M. Hodge
  • R. W. Hardeman

Organizations

  • Royal Signals and Radar Establishment

Tags

DTIC Thesaurus Topics

  • Acids
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Contamination
  • Electrical Properties
  • Electron Spectroscopy
  • Electrons
  • Films
  • Heat Of Reaction
  • Mass Spectrometry
  • Oxide Films
  • Oxides
  • Rocket Oxidizers
  • Spectra
  • Spectrometers
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Computational Modeling and Simulation
  • Semiconductor Device Technology