HgCdTe Surface and Defect Study Program.
Abstract
This report presents program results for the six-month period ending January 1, 1985. Measurements of MIS storage time at the PHOTOX Si02/Hg0.7Cd0.3Te interface indicate that distributed. DLTS of ion-implanted wafers reveal a single bulk trap at E = E sub c - 0.20 eV (E sub g = 0.26 eV at 77k), which is associated with the resultant lattice damage. Continuing studies of the initial stages of oxidation reveal that the reaction occurring at the surface is not directly photon assisted. Initial PES characterization of the alteration of surface structure and composition by chemical processes is presented. Data showing precise removal of Hg from the surface using an incident electron beam is also presented. An initial study of the reaction chemistry between Ag and A1 and the HgCdTe surface is described. Finally, the sensitivity of defect energy levels in semiconductors to the host band structures and impurity potentials have been studied for approximately 30 impurities in CdTe using four different band structure models. Keywords: Photoelectron spectroscopy; Electronic structure, Interface, Storage time, and Minority carrier lifetime.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1985
- Accession Number
- ADA166793
Entities
People
- C. K. Shih
- G. P. Carey
- J. A. Silberman
- John A. Wilson
- V. A. Cotton