HgCdTe Surface and Defect Study Program.
Abstract
Correlations are made between capacitance-voltage measurements of MIS structures formed on horizontal zone melt grown HgCdTe (x = 0.3) wafers and the devices proximity to grain boundaries. Large changes in flat-band voltage and hysteresis are seen though the density of interface traps is relatively unaffected. The type and amount of changes seen are sufficient to account for the wafer to wafer inconsistancies often seen in C-V measurements. Similar fluctuations in surface properties over epitaxially grown wafers can be attributed to the low angle grain boundaries, which are present acting as undesired interfaces in a similar manner. Interface state structures for the HgCdTe PHOTOX Si02 interface was determined by complex admittance spectroscopy while compositional variations were measured by low temperature (77k) electroreflectance. Results are also presented of the dependence of capacitance-voltage behavior on planar defect proximity. Deep states due to ion implant damage were examined with DLTS and atomic profiles measured with SIMS are presented for A1, Mg, Na, Si, P, As, H, Br and Cu. Photoelectron spectroscopy results are presented of the Ag/HgCdTe interface, e beam induced Hg desorption from a cleaved surface and of the surface that results from Br2 based chemical treatments. Several recent theoretical studies of the local structure of semiconductor alloys are also presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1985
- Accession Number
- ADA166794
Entities
People
- C. K. Shih
- G. P. Carey
- J. A. Silberman
- John A. Wilson
- V. A. Cotton