HgCdTe Surface and Defect Study Program.
Abstract
Enhanced doping density within 250A of the passivated interface of Hg0.7Cd0.3Te (PHO-TOX-Si02 and anodic oxide) were measured using capacitance voltage techniques. Detailed doping profiles in channeled implants in Hg0.7Cd0.3Te show that nuclear damage is the dominant mechanism causing damage induced donor levels with profiles similar to those expected for unoriented implants. Implant atomic profiles are presented for a variety of ions. The role of the weak Hg bond is discussed in forming interfaces with Ag, Cu and A1. CdTe band structure is calculated using a nonlocal pseuo-potential and the results are used to interpret angle-resolved photoemission spectroscopy results on HgCdTe. Dislocation energies and hardnesses are calculated by an extension of Harrison's model as are bond length and bond energy changes. Bond-length relaxation in pseudo-binary alloys is applied to the case of tetrahedral structures and compared to GAl-xInxAs. Anomalus behavior of Si 2p core-exciton binding energy and line width is explained in SixGe1-x alloys. Finally, correlations between Cd and Zn in Cd1-xZnxTe and Hg and Zn in Hg1-xZnxTe are calculated. Keywords: Tetrahedral crystal structure, Electronic structure, Interface, Damage doping, Channeled implants, Surface damage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1986
- Accession Number
- ADA166795
Entities
People
- A. K. Wahl
- G. P. Carey
- J. A. Silberman
- John A. Wilson
- V. A. Cotton