Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenides.
Abstract
The low temperature photoluminescence properties of Si-, 0- or (Si + 0) - implanted GaAs have been analyzed. Liquid Encapsulated Czochralski (LEC) grown GaAS was implanted with 100 keV silicon ions at a dose of 6 x 10 to the 12th power/sq cm and/or 65 keV oxygen ions at a dose of 1.5 x 10 to the 12th power or 3 x 10 to the 12th power /sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The 0- and (Si+O)- implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAs:Si+O layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAs:Si+O layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition (e,SiAs) in the GaAs:Si layers was quenched in the 400 C annealed GaAs:Si+O layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low resistivity GaAs:Si+O layers annealed at 900 C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1985
- Accession Number
- ADA167070
Entities
People
- Kevin Keefer
Organizations
- Air Force Institute of Technology