Surface Depletion Correction to Carrier Profiles by Hall Measurements.

Abstract

A method was developed for correcting a carrier profile by Hall Measurements for the surface depletion effect. The method assumes that the experimental data is to be fit with a Pearson type-IV curve. In order to correct the measured profile it is necessary to know the depletion width after each etch. The depletion widths are dependent upon the real profile and not the measured, therefore if one only has measured data, the depletion width cannot be directly determined. In order to gain insight into the problem a procedure called 'reverse correction' is developed. It creates a measured profile from a real profile. The method for correction is the following. First assume a real profile is known. Calculate the depletion widths from this profile. From these depletion widths and the Pearson type-IV fit to the original measured data construct a new assumed real profile. Repeat this procedure self-consistently until convergence of the assumed real data to a stable profile. This is the true profile. Convergence is expected in approximately 7 iterations. A BASIC program is included which corrects a measured hall profile by finding an appropriate and self-consistent set of depletion widths. Keywords: Hall effect.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA167073

Entities

People

  • David W. Elsaesser

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattices
  • Crystals
  • Distribution Functions
  • Electrical Properties
  • Energy Bands
  • Experimental Data
  • Field Effect Transistors
  • Hall Effect
  • Ion Implantation
  • Mass Spectrometry
  • Measurement
  • Modules (Electronics)
  • Semiconductor Devices
  • Semiconductors
  • Shape
  • Space Charge
  • Standards

Readers

  • Approximation Theory.
  • Computational Modeling and Simulation
  • Semiconductor Device Technology