Chemistry of Non-Equilibrium Film Deposition.
Abstract
Reactive ion-beam deposition was used to deposit amorphous thin films of dielectric oxides onto low-temperature substrates. Films of TiO2 and PLZT were prepared from metallic and dielectric targets under various beam conditions. Post deposition annealing studies showed the temperature of the crystalline phase transition to be directly affected by film density and thickness. The growth of large grains on the multication PLZT was restricted by continuous porosity resulting from density changes in the film during transformation. Keywords: Thin films; Titanium dioxide; Ion beam deposition; Annealing; Transmission electron microscopy; Lanthanum-modified lead zirconate; and Titanate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1985
- Accession Number
- ADA167103
Entities
People
- A. B. Harker
- P. H. Kobrin