Chemistry of Non-Equilibrium Film Deposition.

Abstract

Reactive ion-beam deposition was used to deposit amorphous thin films of dielectric oxides onto low-temperature substrates. Films of TiO2 and PLZT were prepared from metallic and dielectric targets under various beam conditions. Post deposition annealing studies showed the temperature of the crystalline phase transition to be directly affected by film density and thickness. The growth of large grains on the multication PLZT was restricted by continuous porosity resulting from density changes in the film during transformation. Keywords: Thin films; Titanium dioxide; Ion beam deposition; Annealing; Transmission electron microscopy; Lanthanum-modified lead zirconate; and Titanate.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1985
Accession Number
ADA167103

Entities

People

  • A. B. Harker
  • P. H. Kobrin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Crystals
  • Diffraction
  • Films
  • Grain Growth
  • Ion Beams
  • Low Temperature
  • Materials
  • Materials Science
  • Optical Materials
  • Oxide Films
  • Single Crystals
  • Spectra
  • Thin Films
  • Titanium
  • Titanium Oxides

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene