Semiconductor Alloy Theory.

Abstract

This grant supported our work on semiconductor alloy theory. Many useful results have been obtained, including: (1) generalization of Brooks' formula for alloy-scattering limited electron mobility to including multiple bands and indirect gaps, (2) calculation of SiGe alloys band structure, electron-mobility and core-exciton binding energy and linewidth, (3) comprehensive calculation of bond energy, bond length and mixing enthalpy for all III-V and II-VI pseudo-binary alloys, (4) development of a statistical theory which shows a non-random distribution of atoms in most alloys, (5) studying the sensitivity of defect levels to band structures and impurity potentials, (6) a study of the dipolar contribution to the mixing energy and its implication to the long-range order in alloys, e.g., GaAlAs, and (7) a model which allows a simple but detailed calculation of alloy band-edge properties.

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Document Details

Document Type
Technical Report
Publication Date
Jan 14, 1986
Accession Number
ADA167306

Entities

People

  • An-ban Chen

Organizations

  • Auburn University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Chemical Shifts
  • Compound Semiconductors
  • Crystal Structure
  • Electron Mobility
  • Energy
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Mechanical Properties
  • Perturbation Theory
  • Scattering
  • Semiconductors
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics