High Speed Compound Semiconductor Devices in Layered Structures.

Abstract

Much progress has been made in the growth of GaAs on Si, GaAs MESFETs, MODFETs, HBTs, lasers on Si, modeling of MODFETs and MODFET ring oscillators, InGaAs/A1GaAs MODFETs, InGaAs hot electron transistors, GaAs/A1As resonant tunneling transistors, single and multi quantum wells. Accomplishments were reported in about 200 journal articles, 50 conference papers and 25 seminars over the past three years. Only the GaAs on Si, In sub yGa sub1-7As/A1GaAs MODFET and INGaAs hot electron transistor related research accomplishments are summarized in this document. A list of publications covering all of the research funded by the AFOSR is provided as an appendix for those who are interested. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 25, 1986
Accession Number
ADA168866

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electronics Industry
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Metal Oxide Semiconductors
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing